7/12/00 db91041m-aas/a1 0.26 0.5 dimensions in mm 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4. 0 3. 0 2.54 7.62 6.62 0.5 h11a1x, H11A2x, h 11a3x, h 11a4x, h 11a5x h11a1, h 11a2, h 11a3, h 11a4, h 11a5 optical ly coupled isol ator phototransistor output 1 3 4 6 2 5 absolute maximum r atings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse v oltage 6v power dissipation 105mw output transistor collector-emitter v oltage bv ceo 30v collector-base v oltage bv cbo 70v emitter-collector v oltage bv eco 6v power dissipation 160mw power dissi pa tion total power dissipation 200mw (derate linearly 2.67mw/ c above 25c) appro v als l ul recognised, file no. e91231 'x' specific ation appro v als ll vde 0884 in 3 available lead forms : - - std - g form - smd approved to cecc 00802 l certified to en60950 by the following test bodies :- nemko - certificate no. p96101299 fimko - registration no. 190469-01..22 semko - reference no. 9620076 01 demko - reference no. 305567 description the h11a series of optically coupled isolators consist of infrared light emitting diode and npn silicon photo transistor in a standard 6 pin dual in line plastic package. fe atures l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high isolation v oltage (5.3kv rms ,7.5kv pk ) l all electrical parameters 100% tested l custom electrical selections available applic ations l dc motor controllers l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances option g 7.62 surface mount option sm 10.16 0.26 isocom components ltd unit 25b, park view road west, park v iew industrial estate, brenda road hartlepool, ts25 1yd england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://ww w .isocom.com 10.46 9.86 0.6 0.1 1.25 0.75
db91041m-aas/a1 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.5 v i f = 10ma reverse voltage (v r ) 6 v i r = 10 m a reverse current (i r ) 10 m a v r = 6v output collector-emitter breakdown (bv ceo ) 30 v i c = 1ma ( note 2 ) collector-base breakdown (bv cbo ) 70 v i c = 100 m a emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo ) 50 na v ce = 10v collector-base dark current (i cbo ) 20 na v ce = 10v coupled current transfer ratio (ctr) h11a1 50 % 10ma i f , 10v v ce H11A2 20 % 10ma i f , 10v v ce h11a3 20 % 10ma i f , 10v v ce h11a4 10 % 10ma i f , 10v v ce h11a5 30 % 10ma i f , 10v v ce collector-emitter saturation voltagev ce(sat) 0.4 v 10ma i f , 0.5ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 2 m s v cc = 10v , i c = 2ma output fall time tf 2 m s r l = 100 w fig 1 note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 7/12/00 electrical characteristics ( t a = 25c unless otherwise noted ) output output r l = 100 w input 10% 90% 90% 10% t on t r fig 1 v cc t off t f
db91041m-aas/a1 7/12/00 50 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 100 forward current i f (ma) 70 80 -30 0 25 50 75 100 125 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 v ce = 10v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) 1 2 5 10 20 50 0 1.2 1.6 2.0 2.4 2.8 v ce = 0.5v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) 0.8 0.4 0 0.5 1.0 1.5 i f = 10ma v ce = 10v relative current transfer ratio vs. ambient temperature relative current transfer ratio ambient temperature t a ( c ) -30 0 25 50 75 100 -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 i f = 10ma i c = 0.5ma
|
